IXTA98N075T IXTP98N075T
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
R G = 5 Ω (External)
38
64
3100
520
125
20
42
42
S
pF
pF
pF
ns
ns
ns
t f
27
ns
Pins: 1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
Q g(on)
68
nC
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
18
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gd
R thJC
R thCS
15
0.50
nC
0.65 ° C/W
° C/W
A
A1
b
b2
c
c2
4.06
2.03
0.51
1.14
0.46
1.14
4.83
2.79
0.99
1.40
0.74
1.40
.160
.080
.020
.045
.018
.045
.190
.110
.039
.055
.029
.055
D
D1
E
E1
e
L
L1
8.64
7.11
9.65
6.86
2.54
14.61
2.29
9.65
8.13
10.29
8.13
BSC
15.88
2.79
.340
.280
.380
.270
.100
.575
.090
.380
.320
.405
.320
BSC
.625
.110
Source-Drain Diode
Symbol Test ConditionsCharacteristic Values
L2
L3
L4
1.02
1.27
0
1.40
1.78
0.38
.040
.050
0
.055
.070
.015
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
R
0.46
0.74
.018
.029
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V, Note 1
I F = 49 A, -di/dt = 100 A/ μ s
50
98
280
1.5
A
A
V
ns
TO-220 (IXTP) Outline
V R = 40 V, V GS = 0 V
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location is 5 mm or less from the package body.
Pins:
1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料
IXTB62N50L MOSFET N-CH 500V 62A PLUS264
IXTC110N25T MOSFET N-CH 250V 50A ISOPLUS220
IXTC13N50 MOSFET N-CH 500V 12A ISOPLUS220
IXTC160N10T MOSFET N-CH 100V 83A ISOPLUS220
IXTC180N085T MOSFET N-CH 85V 110A ISOPLUS220
IXTC200N10T MOSFET N-CH 100V 101A ISOPLUS220
IXTC220N055T MOSFET N-CH 55V 130A ISOPLUS220
IXTC220N075T MOSFET N-CH 75V 115A ISOPLUS220
相关代理商/技术参数
IXTA98N075T7 功能描述:MOSFET 98 Amps 75V 9.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTB30N100L 功能描述:MOSFET 30 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTB62N50L 功能描述:MOSFET 62 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTC102N20T 功能描述:MOSFET 102 Amps 200V 22 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTC102N25T 功能描述:MOSFET 102 Amps 250V 29 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTC110N25T 功能描述:MOSFET 110 Amps 250V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTC130N15T 功能描述:MOSFET 130 Amps 150V 12 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTC13N50 功能描述:MOSFET 13 Amps 500V 0.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube